Abstract: Biological effects of Portulaca oleracea L after ion beam implantation of low energy N+ were studied. The results show that the budding speed and budding rate increase by implanting treatment. It is most notable at the dosage 1.5×1017N+/cm2. The survival curve takes a “saddle pattern ”with the increase of the implanting dosages ,in which the survival rate treated is higher than the contrast . Low energy N+ ion implantation doesn′t cause the death rate much higher within the enperimental condition. Therefore , it is thought that low energy N+ ion implantation can improve the budding and survival rate of Portulaca oleracea L。