钾肥和硅肥对油用亚麻茎秆抗倒伏特性的影响

doi:10.11924/j.issn.1000-6850.casb2020-0046

摘要/Abstract

摘要：

为了优化油用亚麻抗倒伏的肥料运筹措施,以‘陇亚11号’和‘定亚23号’为试验材料,通过裂区设计,研究了钾肥（不施钾、52.5 kg K₂O/hm²和105 kg K₂O /hm² 3个水平）和硅肥（不施硅和90 kg SiO₂/hm² 2个水平）用量对油用亚麻茎秆形态学、力学抗倒伏特性及产量的影响。结果表明：‘陇亚11号’的株高、重心高度及茎粗、壁厚、抗折力均显著大于‘定亚23号’,茎秆形态学及力学抗倒伏特性的综合影响下,‘陇亚11号’较‘定亚23号’倒伏率提高21.24%而产量降低9.43%。钾肥显著改善了抗倒的茎秆表观形态学特性,施钾后茎粗、壁厚、茎秆抗折力、抗倒伏指数提高而株高和重心高度降低,千粒重和籽粒产量分别提高7.35%和9.34%。硅肥对茎秆形态学、力学特性及籽粒产量均无主效应,但硅肥与钾肥的互作使茎粗显著增加。抗倒伏指数与茎粗、壁厚呈显著正相关,与株高、重心高度呈显著负相关。品种间的茎秆抗倒伏特性差异较大,施用钾肥显著改善了抗倒的茎秆表观形态学特性,优化了茎秆机械性能,增强了油用亚麻的抗倒伏能力;供钾量较低时,硅肥与钾肥对茎粗的互作正效应明显。

关键词: 钾肥, 硅肥, 油用亚麻, 茎秆特性, 抗倒伏

Abstract:

To improve lodging resistance of oil flax with effective fertilization measures, taking ‘Longya 11’ and ‘Dingya 23’ as experimental materials, the effects of potash fertilizer and silicon fertilizer application on stem morphology, mechanical lodging resistance and yield of oil flax were studied through split zone design. The results showed that plant height, height of center gravity, stem diameter, wall thickness and bending strength of ‘Longya 11’ were significantly higher than those of ‘Dingya 23’. Under the comprehensive influence of stem morphology and mechanical lodging resistance, the lodging rate of ‘Longya 11’ increased by 21.24% and its yield decreased by 9.43% compared with those of ‘Dingya 23’. Potash fertilizer significantly improved the apparent morphological characteristics of stem lodging-resistance, enhanced stem diameter, wall thickness, stem bending strength and lodging-resistant index dramatically, while reduced plant height and height of center gravity obviously. 1000-grain weight and grain yield increased by 7.35% and 9.34%. The main effects of silicon fertilizer on stem morphology, mechanical properties and grain yield did not reach significant level, but the interaction between silicon fertilizer and potassium fertilizer significantly increased stem diameter. The comprehensive lodging resistance index was significantly affected by the morphological characteristics of stems, and was significantly and negatively correlated with plant height and height of center of gravity, and significantly and positively correlated with stem diameter and wall thickness. There was significant difference in stem lodging resistance between the varieties. Potassium fertilization significantly improved apparent morphology and mechanical properties of stems, and then increased lodging resistance. The positive interaction between potassium and silicon fertilization was significant when potassium supply was low.

Key words: potash fertilizer, silicon fertilizer, oil flax, stem characteristics, lodging resistance

中图分类号:

S565.9

王月萍, 郭丽琢, 高玉红, 刘亚辉, 苟振宇, 夏张祥. 钾肥和硅肥对油用亚麻茎秆抗倒伏特性的影响[J]. 中国农学通报, 2020, 36(36): 26-33.

Wang Yueping, Guo Lizhuo, Gao Yuhong, Liu Yahui, Gou Zhenyu, Xia Zhangxiang. Influence of Potassium and Silicon Fertilizer on Characteristics of Stem Lodging-Resistance of Oil Flax[J]. Chinese Agricultural Science Bulletin, 2020, 36(36): 26-33.

图/表 7

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处理			倒伏程度	倒伏率/%
V1	K0	Si0	3	98.21a
	K0	Si1	3	93.42a
	K1	Si0	3	93.21a
	K1	Si1	3	93.69a
	K2	Si0	3	97.12a
	K2	Si1	3	97.6a
V2	K0	Si0	2	86.6ab
	K0	Si1	2	90.32a
	K1	Si0	2	87.21ab
	K1	Si1	3	69.87c
	K2	Si0	2	72.54bc
	K2	Si1	2	66.29c

处理			倒伏程度	倒伏率/%
V1	K0	Si0	3	98.21a
	K0	Si1	3	93.42a
	K1	Si0	3	93.21a
	K1	Si1	3	93.69a
	K2	Si0	3	97.12a
	K2	Si1	3	97.6a
V2	K0	Si0	2	86.6ab
	K0	Si1	2	90.32a
	K1	Si0	2	87.21ab
	K1	Si1	3	69.87c
	K2	Si0	2	72.54bc
	K2	Si1	2	66.29c

处理			株高/cm	重心高度/cm	茎粗/mm	壁厚/mm
V1	K0	Si0	72.12a	49.40a	3.56bcd	0.838ab
	K0	Si1	71.87a	47.90ab	3.70bcd	0.875a
	K1	Si0	68.52ab	47.40ab	3.80bc	0.897a
	K1	Si1	68.00ab	46.95ab	3.97ab	0.925a
	K2	Si0	65.72ab	39.58cd	4.32a	0.947a
	K2	Si1	66.02ab	43.70bc	3.81bc	0.812abc
V2	K0	Si0	62.45bc	36.63de	3.25d	0.655c
	K0	Si1	59.00cd	35.90de	3.40cd	0.688bc
	K1	Si0	56.12cd	35.78de	3.59bcd	0.812abc
	K1	Si1	53.63d	34.82de	3.912ab	0.882a
	K2	Si0	53.15d	32.58e	3.93ab	0.865a
	K2	Si1	54.83d	34.93de	3.64bcd	0.980a
V			95.706^**	40.323^**	7.218^*	4.715^*
K			9.611^**	53.371^**	9.378^**	7.188^**
Si			0.409	1.063	0.001	0.612
V*K			0.25	1.636	0.371	4.356*
V*Si			0.265	0.571	0.539	2.313
K*Si			0.522	1.627	5.2*	0.319
VKSi			0.305	1.846	0.133	1.525

处理			株高/cm	重心高度/cm	茎粗/mm	壁厚/mm
V1	K0	Si0	72.12a	49.40a	3.56bcd	0.838ab
	K0	Si1	71.87a	47.90ab	3.70bcd	0.875a
	K1	Si0	68.52ab	47.40ab	3.80bc	0.897a
	K1	Si1	68.00ab	46.95ab	3.97ab	0.925a
	K2	Si0	65.72ab	39.58cd	4.32a	0.947a
	K2	Si1	66.02ab	43.70bc	3.81bc	0.812abc
V2	K0	Si0	62.45bc	36.63de	3.25d	0.655c
	K0	Si1	59.00cd	35.90de	3.40cd	0.688bc
	K1	Si0	56.12cd	35.78de	3.59bcd	0.812abc
	K1	Si1	53.63d	34.82de	3.912ab	0.882a
	K2	Si0	53.15d	32.58e	3.93ab	0.865a
	K2	Si1	54.83d	34.93de	3.64bcd	0.980a
V			95.706^**	40.323^**	7.218^*	4.715^*
K			9.611^**	53.371^**	9.378^**	7.188^**
Si			0.409	1.063	0.001	0.612
V*K			0.25	1.636	0.371	4.356*
V*Si			0.265	0.571	0.539	2.313
K*Si			0.522	1.627	5.2*	0.319
VKSi			0.305	1.846	0.133	1.525

处理	茎秆抗折力	抗倒伏指数
V	6.537^*	2.336
K	4.642^**	13.526^*
Si	0.606	0.666
V*K	9.105^**	0.395
V*Si	0	0.159
K*Si	4.296^*	0.031
VKSi	0.359	0.095